mrf21090r3 MRF21090SR3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. ? typical w - cdma performance for 2140 mhz, 28 volts 4.096 mhz bw @ 5 mhz offset, 1 perch 15 dtch: output power ? 11.5 watts efficiency ? 16% gain ? 12.2 db acpr ? - 45 dbc ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 270 1.54 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.65 c/w document number: mrf21090 rev. 8, 5/2006 freescale semiconductor technical data mrf21090r3 MRF21090SR3 2110 - 2170 mhz, 90 w, 28 v lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s MRF21090SR3 case 465b - 03, style 1 ni - 880 mrf21090r3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf21090r3 MRF21090SR3 table 3. esd protection characteristics test conditions class human body model mrf21090r3 MRF21090SR3 2 (minimum) 1 (minimum) machine model mrf21090r3 MRF21090SR3 m3 (minimum) m4 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain- source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s gate threshold voltage (v ds = 10 v, i d = 300 a) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 v, i d = 750 ma) v gs(q) 3 3.8 5 vdc drain- source on - voltage (v gs = 10 v, i d = 1 a) v ds(on) ? 0.1 0.6 vdc dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 4.2 ? pf functional tests (in freescale test fixture) common- source amplifier power gain (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10 11.7 ? db drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) 30 33 ? % intermodulation distortion (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? -30 - 27.5 dbc input return loss (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? -12 - 9.0 db common- source amplifier power gain (v dd = 28 vdc, p out = 75 w cw, i dq = 750 ma, f = 2170 mhz) g ps ? 11.7 ? db drain efficiency (v dd = 28 vdc, p out = 75 w cw, i dq = 750 ma, f = 2170 mhz) ? 41 ? % 1. part is internally matched both on input and output.
mrf21090r3 MRF21090SR3 3 rf device data freescale semiconductor figure 1. mrf21090r3(sr3) test circuit schematic b1 ferrite bead, fair rite #2743019447 c1, c13 470 f, 50 v electrolytic capacitors c2, c10 22 f, 35 v tantalum surface mount chip capacitors, kemet c3, c9 20 nf chip capacitors, atc #100b203mca500x c4, c8 5.1 pf chip capacitors, atc #100b5r1cca500x c5, c12 0.4 - 2.5 pf variable capacitors, johanson gigatrim c6 10 pf chip capacitor, atc #100b100jca500x c7 1 f, 35 v tantalum surface mount chip capacitor, kemet c11 1 nf chip capacitor, atc #100b102jca500x c14 8.2 pf chip capacitor, atc #100b8r2cca500x r1 13 , 1/4 w chip resistor, garret instrument #rm73b2b130jt, r2 12 , 1/4 w chip resistor, garret instrument #rm73b2b120jt z1 30.7 x 2.09 mm microstrip z2 5.99 x 2.09 mm microstrip z3 7.55 x 9.89 mm microstrip z4 3.77 x 15.71 mm microstrip z5 6.89 x 26.17 mm microstrip z6 14.93 x 32.05 mm microstrip v v rf input rf output r1 z1 z2 z3 z4 z5 z6 z7 z8 z9 z10 z11 c7 c8 c9 c10 c11 c12 c14 c13 c6 r2 b1 dut c5 c1 c2 c3 c4 gg dd z7 10.23 x 2.09 mm microstrip z8 6.03 x 2.09 mm microstrip z9 23.98 x 2.09 mm microstrip z10 29.82 x 1.15 mm microstrip z11 17.08 x 1.15 mm microstrip ws1, ws2 beryllium copper wear blocks 5 mils thick brass banana jack and nut red banana jack and nut green banana jack and nut type n jack connectors, 3052 - 1648- 10, omni specra 4 - 40 head screws 0.125 long 4 - 40 head screws 0.188 long 4 - 40 head screws 0.312 long 4 - 40 head screws 0.438 long endplates brass endplates for copper bedstead bedstead copper bedstead/heatsink insert copper bedstead insert raw pcb 0.030 glass teflon ? , 2 oz copper clad 3 x 5 arion rf circuit 3 x 5 copper clad pcb teflon ? , mrf21090, cmr + + + ++ figure 2. mrf21090r3(sr3) test circuit component layout c u t o u t drain feed c1 c2 c3 c4 c6 c5 c7 c8 c9 c10 c11 c12 c14 b1 r2 r1 c13 bias gate feed bias mrf21090 freescale has begun the transition of marking pr inted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf device data freescale semiconductor mrf21090r3 MRF21090SR3 typical performance (in freescale test fixture) p out , output power (watts) avg. f, frequency (mhz) 60 0 figure 3. class ab broadband circuit performance 2080 10 5 figure 4. cdma acpr, power gain and drain efficiency versus output power 20 0 30 20 15 20 30 40 v dd = 28 vdc p out = 90 w (pep) i dq = 750 ma two?tone measurement 100 khz tone spacing figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power 10 25 p out , output power (watts) pep ?25 ?55 1 ?45 ?40 ?30 100 imd, intermodulation distortion (dbc) ?50 ?35 10 figure 7. power gain versus output power figure 8. power gain and intermodulation distortion versus supply voltage p out , output power (watts) pep 15 10 1 12 14 100 g ps , power gain (db) 11 13 v ds , drain voltage (volts) 11.8 11.0 11.4 11.6 34 20 22 28 10.8 11.2 10.6 10 32 24 26 30 2100 2120 2140 2160 2180 2200 50 ?35 ?30 ?25 ?20 ?15 ?10 ?5 5.0 10 15 ?70 ?60 ?50 ?40 ?30 ?20 adjacent channel power ratio ( db ) v dd = 28 vdc f = 2140 mhz two?tone measurement 100 khz tone spacing p out , output power (watts) pep ?20 ?80 1 ?60 ?50 ?30 100 imd, intermodulation distortion (dbc) ?70 ?40 10 v dd = 28 vdc i dq = 750 ma f = 2140 mhz two?tone measurement 100 khz tone spacing g ps , power gain (db) imd, intermodulation distortion (dbc) ?34 ?32 ?30 ?28 ?26 ?24 ?22 v dd = 28 vdc f = 2140 mhz two?tone measurement 100 khz tone spacing p out = 90 w (pep) i dq = 750 ma f = 2140 mhz two?tone measurement 100 khz tone spacing fixture tuned for 28 volts irl g ps imd acpr 1000 ma 800 ma 1500 ma 500 ma 2000 ma 5th order 7th order 3rd order 2000 ma 1500 ma 1000 ma 800 ma 500 ma imd , drain efficiency (%), g ps , power gain (d b , drain efficiency (%), g ps , power gain (d b irl, input return loss (db) imd, intermodulation distortion (dbc) g ps g ps v dd = 28 vdc i dq = 1000 ma f = 2140 mhz channel spacing (channel bandwidth): 4.096 mhz (5 mhz)
mrf21090r3 MRF21090SR3 5 rf device data freescale semiconductor figure 9. series equivalent source and load impedance f mhz z source z load 2110 2140 2170 3.03 - j3.40 2.60 - j3.50 3.02 - j3.46 0.92 - j1.67 0.97 - j1.80 0.90 - j1.52 v dd = 28 v, i dq = 750 ma, p out = 90 w (pep) 2110 mhz f = 2170 mhz f = 2110 mhz 2170 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source z load z o = 5
6 rf device data freescale semiconductor mrf21090r3 MRF21090SR3 notes
mrf21090r3 MRF21090SR3 7 rf device data freescale semiconductor package dimensions case 465b - 03 issue d ni - 880 mrf21090r3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.16 (29.57) based on m3 screw. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.175 0.205 4.44 5.21 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref 4 case 465c - 02 issue d ni - 880s MRF21090SR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref
8 rf device data freescale semiconductor mrf21090r3 MRF21090SR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf21090 rev. 8, 5/2006
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